Method of fabricating an integrated device
US8320038B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2009 |
| Grant date | Nov 27, 2012 |
| Priority date | — |
| Expiry date | Jul 6, 2030 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81B2201/047
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of fabricating an integrated device including a MicroElectroMechanical system (MEMS) and an associated microcircuit is provided. In one embodiment, the method comprises: forming a high temperature capable contact through a dielectric layer to an underlying element of a microcircuit formed adjacent to a MicroElectroMechanical System (MEMS) structure on a substrate; and depositing a layer of conducting material over the dielectric layer, and patterning the layer of conducting material to form a local interconnect (LI) for the microcircuit overlying and electrically coupled to the contact and a bottom electrode for the adjacent MEMS structure. Other embodiments are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.