Patent · US Active

Memory circuit and method of writing data to and reading data from memory circuit

US8320195B2 · kind B2 · utility

0Cited by
8References
8Claims
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Assignee

Inventors

Key dates

Filing dateFeb 12, 2010
Grant dateNov 27, 2012
Priority date
Expiry dateFeb 12, 2030

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH03K19/0033
  • WIPO fieldBasic communication processes
  • WIPO sectorElectrical engineering

Abstract

A disclosed memory circuit includes first and second latch circuits, each writing a write data at a timing of a clock signal and retaining the write data, the write data having been input in each of the first and second latch circuits, a data input circuit supplying the write data to each of the first and second latch circuits when a write enable signal indicates a state allowing the write data to be written, a write back circuit supplying the write data retained in the second latch circuit to the first latch circuit when the write enable signal indicates a state preventing the write data from being written, wherein a robustness against noise in the second latch circuit is more improved than that in the first latch circuit.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.