Plasma reactor and etching method using the same
US8323522B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 18, 2010 |
| Grant date | Dec 4, 2012 |
| Priority date | — |
| Expiry date | May 24, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32266
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma reactor and an etching method using the same are provided. The method includes a first changing step of changing the number or arrangement structure of inductive coils connecting to an RF source power supply unit, a step of applying RF source power and generating high density plasma, a first etching step of etching a first etch-target layer of a workpiece, a first stopping step of stopping applying the RF source power, a second changing step of changing the number or arrangement structure of the inductive coils, a step of applying RF source power to corresponding inductive coils and generating low density plasma, a second etching step of etching a second etch-target layer of the workpiece, and a second stopping step of stopping applying the RF source power.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.