Method of manufacturing semiconductor integrated circuit device
US8323992B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 8, 2011 |
| Grant date | Dec 4, 2012 |
| Priority date | — |
| Expiry date | Sep 8, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R1/0735
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The variation in the contact pressures of the plurality of contact terminals to the plurality of chip electrodes is decreased. A thin-film sheet (first sheet) includes: a principal surface (contact-terminal formation surface) on which a plurality of contactors (contact terminals) are formed; and a rear surface positioned on an opposite side to the principal surface. Also, in the thin film sheet, a plurality of wirings and dummy wiring are arranged between the principal surface and the rear surface. A slit formed of an opening portion penetrating from the principal surface of the thin-film sheet to the rear surface thereof is formed along the wiring between the dummy wiring and the contactor arranged at an end of a contactor group (first contact terminal group) in which the plurality of contactors are aligned.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.