Fabrication methods for HEMT devices and circuits on compound semiconductor materials
US8324037B1 · kind B1 · utility
Inventors
Key dates
| Filing date | Sep 28, 2011 |
| Grant date | Dec 4, 2012 |
| Priority date | — |
| Expiry date | Sep 28, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/411
Abstract
The prior art method for the formation of T-gate or inverted L-gate is achieved through several lift-off processes and requires at least two different photoresists and hence two different developers. In one embodiment of the present invention, an etching method for the formation of the source, the drain and the T-gate or inverted L-gate of a compound semiconductor HEMT device is disclosed. In such a method, only one type of photoresist and developer are needed. In one other embodiment, a fabrication process for a HEMT device is disclosed to have the stem of the T-gate or the inverted L-gate defined by a dielectric cavity and its mechanical strength enhanced by a dielectric layer. In another embodiment, a fabrication process for a HEMT device is disclosed to have the stems of the source and the drain defined by dielectric cavities and their mechanical strength enhanced by a dielectric layer. In yet another embodiment, a fabrication process for a HEMT device is revealed to have the stems of the source, the drain and the T-gate or inverted L-gate of a compound semiconductor HEMT strengthened by dielectric supporting pillars.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.