Semiconductor device and method for increasing semiconductor device effective operation area
US8324080B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2011 |
| Grant date | Dec 4, 2012 |
| Priority date | — |
| Expiry date | Aug 31, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for increasing semiconductor device effective operation area, comprising following steps: depositing first conductive layer on the substrate; using laser for scribing a plurality of the first scribe lines on the first conductive layer, where the scribe lines are scribed on the bottom of the first conductive layer; depositing a plurality of the semiconductor material layers on the first conductive layer and in the plurality of the first scribe lines; using laser for scribing a plurality of the second scribe lines on the semiconductor material layer, where the scribe lines are scribed on the bottom of the semiconductor material layer, each second scribe line is comprised of a plurality of the second pores; depositing a second conductive layer on the semiconductor material layer and in the plurality of the first scribe lines and the plurality of the second scribe lines; using laser for scribing a plurality of the third scribe lines on the second conductive layer, where the scribe lines are scribed on the bottom of the semiconductor material layer; wherein the second pores are shortened for shortening the distance between the first scribe line and second scribe line and the di…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.