Scalable light-induced metallic to semiconducting conversion of carbon nanotubes and applications to field-effect transistor devices
US8324087B2 · kind B2 · utility
5Cited by
3References
27Claims
0Family size
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Key dates
| Filing date | Mar 19, 2010 |
| Grant date | Dec 4, 2012 |
| Priority date | — |
| Expiry date | Aug 23, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/221
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Among others, techniques are described for forming nanotubes. In one aspect, a method includes forming a base layer of a transition metal on a substrate. The method also includes heating the substrate with the base layer in a mixture of gases to grow nanotubes on the base layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.