Wet etching agent for II-VI semiconductors and method
US8324112B2 · kind B2 · utility
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3References
18Claims
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Key dates
| Filing date | Nov 15, 2010 |
| Grant date | Dec 4, 2012 |
| Priority date | — |
| Expiry date | Feb 11, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A novel etching agent for etching II-VI semiconductors is provided. The etching agent includes an aqueous solution of potassium permanganate and phosphoric acid. This etching solution can etch II-VI semiconductors at a rapid rate but tend to be much less reactive with III-V semiconductors. The provided agent can be used in a method for etching II-VI semiconductors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.