Interfering excitations in FQHE fluids

US8324120B2 · kind B2 · utility

Assignee

• Alcatel Lucent · FR

Inventors

• Kirk W. Baldwin · New Providence, US
• Loren N. Pfeiffer · Morristown, US
• Kenneth William West · Morristown, US
• Robert L. Willett · Hackettstown, US

Key dates

• Filing date: May 6, 2011
• Grant date: Dec 4, 2012
• Expiry date: Jun 3, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N52/101

Abstract

An apparatus includes a substrate with a planar surface, a multilayer of semiconductor layers located on the planar surface, a plurality of electrodes located over the multilayer, and a dielectric layer located between the electrodes and the multilayer. The multilayer includes a 2D quantum well. A first set of the electrodes is located to substantially surround a lateral area of the 2D quantum well. A second set of the electrodes is controllable to vary a lateral width of a non-depleted channel between the substantially surrounded lateral area of the 2D quantum well and another area of the 2D quantum well. A third set of the electrodes is controllable to vary an area of a non-depleted portion of the lateral area.