Detector for detecting electromagnetic radiation having dopant concentration of a well increases monotonically in the direction parallel to the surface of a semiconductor substrate

US8324549B2 · kind B2 · utility

Assignee

• Fraunhofer-Gesellschaft zur förderung der angewandten Forschung e.V. · DE

Inventors

• Daniel Durini Romero · Essen, DE
• Werner Brockherde · Duisburg, DE
• Bedrich Hosticka · Rübhausen, DE

Key dates

• Filing date: May 6, 2010
• Grant date: Dec 4, 2012
• Expiry date: Jun 2, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/8037

Abstract

A detector for detecting electromagnetic radiation includes a semiconductor substrate of a first doping type, and a well in the semiconductor substrate, the well being of a second doping type. The first doping type and the second doping type are different and the well has an increasing dopant concentration in a direction parallel to a surface of the semiconductor substrate. In addition, the detector includes a detector terminal doping region which is arranged at least partly in the well in a terminal region of the well. The detection of electromagnetic radiation is based on a generation of free charge carriers by the electromagnetic radiation in a detection region of the well. The detection region has a maximum dopant concentration which is lower than a maximum dopant concentration of the terminal region of the well.