Chip-stacked image sensor having image signal sensing cell, where the image signal sensing cell has photodiodes and charge transmission transistors commonly connected to charge transmission pads
US8324553B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 21, 2008 |
| Grant date | Dec 4, 2012 |
| Priority date | — |
| Expiry date | Aug 30, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/813
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A chip-stacked image sensor obtained by embodying an image sensor cell in two chips and combining the chips with each other is provided. The chip-stacked image sensor includes first and second semiconductor chips. The first semiconductor chip includes a plurality of image signal sensing cells for generating image charges corresponding to image signals sensed by at least four photodiodes and outputting the generated image charges through at least two common terminals and a plurality of image charge transmission pads. The second semiconductor chip includes a plurality of image signal conversion cells for converting the image signals into electrical signals and a plurality of image charge receiving pads. Here, the image charges generated by the image signal sensing cells are transmitted to corresponding image signal conversion cells via the plurality of image charge transmission pads and the plurality of image charge receiving pads.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.