Single-electron detection method and apparatus for solid-state intensity image sensors with a charge-metering device
US8324554B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2010 |
| Grant date | Dec 4, 2012 |
| Priority date | — |
| Expiry date | Jun 3, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F71/00
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present invention include an electron counter with a charge-coupled device (CCD) register configured to transfer electrons to a Geiger-mode avalanche diode (GM-AD) array operably coupled to the output of the CCD register. At high charge levels, a nondestructive amplifier senses the charge at the CCD register output to provide an analog indication of the charge. At low charge levels, noiseless charge splitters or meters divide the charge into single-electron packets, each of which is detected by a GM-AD that provides a digital output indicating whether an electron is present. Example electron counters are particularly well suited for counting photoelectrons generated by large-format, high-speed imaging arrays because they operate with high dynamic range and high sensitivity. As a result, they can be used to image scenes over a wide range of light levels.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.