Ion source and a method of generating an ion beam using an ion source
US8324592B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 2, 2010 |
| Grant date | Dec 4, 2012 |
| Priority date | — |
| Expiry date | Jun 8, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/082
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Multiple control electrodes are provided asymmetrically within the plasma chamber of an ion source at respective positions along the length of the plasma chamber. Biasing the control electrodes selectively can selectively enhance the ion extraction current at adjacent positions along the length of the extraction slit. A method of generating an ion beam is disclosed in which the strengths of the transverse electric fields at different locations along the length of the plasma chamber are controlled to modify the ion beam linear current density profile along the length of the slit. The method is used for controlling the uniformity of a ribbon beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.