Ion implantation apparatus
US8324599B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2009 |
| Grant date | Dec 4, 2012 |
| Priority date | — |
| Expiry date | Apr 3, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2001
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion implanter has an implant wheel with a plurality of wafer carriers distributed about a periphery of the wheel. Each wafer carrier has a heat sink for removing heat from a wafer on the carrier during the implant process by thermal contact between the wafer and the heat sink. A respective wafer lift structure on each carrier is moveable between first and second positions, with the wafer supported spaced away from the heat sink and in thermal contact with the heat sink respectively. The lift structure is operated to move between the first and second positions wheel the implant is rotating. This allows control of wafer temperature during the implant process by adjusting the thermal contact between wafers and heat sinks.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.