Semiconductor light emitting device package
US8324648B2 · kind B2 · utility
4Cited by
3References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 4, 2010 |
| Grant date | Dec 4, 2012 |
| Priority date | — |
| Expiry date | Mar 31, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/882
Abstract
A plurality of reflective nanometer-structures formed on the reflective surface of a semiconductor light emitting device package increases light emitting efficiency. Every pitch between each reflective nanometer-structure has an interval P shorter than the half wavelength of the visible light. Moreover, each of the plurality of reflective nanometer-structures has a depth H, wherein the ratio of the depth H over the interval P is not less than 2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.