Semiconductor device
US8324687B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 28, 2010 |
| Grant date | Dec 4, 2012 |
| Priority date | — |
| Expiry date | Oct 21, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/27
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a semiconductor device comprising: a PW layer formed at a surface of a semiconductor substrate; an NW layer formed at the surface of the semiconductor substrate to be in contact with the PW layer; a p+ base layer formed at the surface of the semiconductor substrate in the PW layer; an n+ collector layer formed at the surface of the semiconductor substrate in the NW layer; an n+ emitter layer located between the p+ base layer and the n+ collector layer and formed at the surface of the semiconductor substrate in the PW layer; and an n± layer formed between the n+ collector layer and the PW layer to be in contact with the n+ collector layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.