Self aligned field effect transistor structure

US8324689B2 · kind B2 · utility

Assignee

• KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY · KR

Inventors

• Lee-Mi Do · Daejeon, KR
• Kyu Ha Baek · Daejeon, KR

Key dates

• Filing date: Dec 10, 2009
• Grant date: Dec 4, 2012
• Expiry date: Dec 28, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/0241

Abstract

Provided is a self aligned field effect transistor structure. The self aligned field effect transistor structure includes: an active region pattern on a substrate; a first gate electrode and a second gate electrode facing each other with the active region pattern therebetween; and a source electrode and a drain electrode connected to the active region pattern and disposed to be symmetric with respect to a line connecting the first and second gate electrodes, wherein the first and second gate electrodes and the source and drain electrodes are disposed on the same plane of the substrate.