Integrated inductor
US8324692B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 23, 2010 |
| Grant date | Dec 4, 2012 |
| Priority date | — |
| Expiry date | Nov 23, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/00
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of fabricating an integrated inductor device includes providing a silicon substrate and forming a thickness of an insulating layer overlying the silicon substrate. The insulating layer includes a dummy structure within a portion of the thickness. The method includes forming an inductor having a first portion and a second portion. The first portion includes a spiral coil of conductor lines. The method also includes exposing the dummy structure by forming an opening in the insulating layer and removing the dummy structure to form a cavity underlying the inductor to reduce a dielectric constant and to increase a Q value of the inductor. The method includes using aluminum or copper for the dummy structures. The method includes dry etching the insulator and wet etching the dummy structure. The method also includes forming the inductors using aluminum or copper.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.