Method for manufacturing semiconductor device
US8324699B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2010 |
| Grant date | Dec 4, 2012 |
| Priority date | — |
| Expiry date | Mar 19, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/481
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing an insulating film, which is used as an insulating film used for a semiconductor integrated circuit, whose reliability can be ensured even though it has small thickness, is provided. In particular, a method for manufacturing a high-quality insulating film over a substrate having an insulating surface, which can be enlarged, at low substrate temperature, is provided. A monosilane gas (SiH4), nitrous oxide (N2O), and a rare gas are introduced into a chamber to generate high-density plasma at a pressure higher than or equal to 10 Pa and lower than or equal to 30 Pa so that an insulating film is formed over a substrate having an insulating surface. After that, the supply of a monosilane gas is stopped, and nitrous oxide (N2O) and a rare gas are introduced without exposure to the air to perform plasma treatment on a surface of the insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.