Semiconductor integrated circuit device and manufacturing method thereof
US8324708B2 · kind B2 · utility
1Cited by
0References
3Claims
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Assignee
Inventors
Key dates
| Filing date | Sep 22, 2010 |
| Grant date | Dec 4, 2012 |
| Priority date | — |
| Expiry date | Dec 29, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a semiconductor integrated circuit device including fuse elements for carrying out laser trimming processing, in which a space width between aluminum interconnects of the first layer to be connected to the adjacent fuse elements is set to less than twice of the thickness of the side wall of the metal interlayer insulating film of the first layer, thereby preventing exposure of the SOG layer having hygroscopic property. In addition, side spacers are provided to side surfaces of the aluminum interconnects of the first layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.