Copper interconnection structure and method for forming copper interconnections
US8324730B2 · kind B2 · utility
7Cited by
1References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 29, 2009 |
| Grant date | Dec 4, 2012 |
| Priority date | — |
| Expiry date | Dec 11, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12044
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A copper interconnection structure includes an insulating layer, an interconnection body including copper in an opening provided on the insulating layer, and a diffusion barrier layer formed between the insulating layer and the interconnection body. The diffusion barrier layer includes an oxide layer including manganese having a compositional ratio of oxygen to manganese (y/x) less than 2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.