Circuit and method for radio frequency amplifier
US8324970B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2010 |
| Grant date | Dec 4, 2012 |
| Priority date | — |
| Expiry date | Oct 23, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A radio frequency amplifier circuit includes a substrate that is capable of receiving a substrate bias voltage. The source of a transistor is capable of receiving a source bias voltage. The drain of the transistor is capable of receiving a drain bias voltage. The gate of the transistor is located between the source and the drain. A radio frequency input signal is coupled to the gate. A substrate bias circuit provides the substrate bias voltage. The substrate bias voltage and the source bias voltage forward bias the first diode formed by the source and the substrate. The substrate bias voltage and the drain bias voltage reverse bias the second diode formed by the drain and the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.