Low output impedance RF amplifier
US8324973B2 · kind B2 · utility
2Cited by
4References
32Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 8, 2009 |
| Grant date | Dec 4, 2012 |
| Priority date | — |
| Expiry date | Dec 9, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2203/5042
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A radio frequency (RF) power amplifier includes a low impedance pre-driver driving the input of a common-source output amplifier stage. The preamplifier includes a first transistor that has a first terminal coupled to a preamplifier RF input node, a second terminal coupled to a preamplifier RF output node, and a third terminal coupled to a supply voltage node. A first inductor is coupled between the RF output node and a bias voltage node. A voltage difference between respective first and second voltages on the RF input node and the RF output node that are substantially in phase, determines current through the first transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.