Producing a diamond semiconductor by implanting dopant using ion implantation
US8328936B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 18, 2011 |
| Grant date | Dec 11, 2012 |
| Priority date | — |
| Expiry date | Oct 18, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process of producing a diamond thin-film includes implanting dopant into a diamond by an ion implantation technique, forming a protective layer on at least part of the surface of the ion-implanted diamond, and firing the protected ion-implanted diamond at a firing pressure of no less than 3.5 GPa and a firing temperature of no less than 600° C. A process of producing a diamond semiconductor includes implanting dopant into each of two diamonds by an ion implantation technique and superimposing the two ion-implanted diamonds on each other such that at least part of the surfaces of each of the ion-implanted diamonds makes contact with each other, and firing the ion implanted diamonds at a firing pressure of no less than 3.5 GPa and a firing temperature of no less than 600° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.