Methods for damage etch and texturing of silicon single crystal substrates

US8329046B2 · kind B2 · utility

Assignee

• ASIA UNION ELECTRONIC CHEMICAL CORP.

Inventors

• Curtis Dove
• Cindy Dutton · Fallbrook, US
• Greg Bauer · Sacramento, US
• Christopher Myers · Carlsbad, US
• Mehdi Balooch · Berkeley, US

Key dates

• Filing date: Feb 5, 2009
• Grant date: Dec 11, 2012
• Expiry date: May 16, 2030

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/50

Abstract

Methods for performing damage etch and texturing of single crystal silicon substrates, particularly for use as solar cells or photovoltaic cells. Damage etch with a TMAH solution followed by texturing using solution of KOH or NaOH mixed with IPA is particularly advantageous. The substitution of some of the IPA with ethylene glycol further improves results. Also disclosed is a process that combines both damage etch and texturing etch into a single step.