Manufacturing method of nitride semiconductor light emitting elements
US8329481B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 9, 2012 |
| Grant date | Dec 11, 2012 |
| Priority date | — |
| Expiry date | Feb 9, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8314
Abstract
A manufacturing method of nitride semiconductor light emitting elements, which can reliably form a mechanically stable wiring electrode leading from a light emitting element surface. A structure protective sacrifice layer is formed around a first electrode layer on a device structure layer beforehand, and after separation of the device structure layer into respective portions for the light emitting elements, the resultant is stuck to a support substrate. Subsequently, forward tapered grooves reaching the structure protective sacrifice layer are formed, and the inverse tapered portion formed outward of the forward tapered groove is lifted off in a lift-off step. Thus, an insulating layer is formed on the forward tapered side walls of the light emitting element, and a wiring electrode layer electrically connected to the second electrode layer on the principal surface of the light emitting element is formed on the insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.