Modified profile gate structure for semiconductor device and methods of forming thereof
US8329546B2 · kind B2 · utility
18Cited by
10References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2010 |
| Grant date | Dec 11, 2012 |
| Priority date | — |
| Expiry date | Jan 22, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor device is illustrated. A modified profile opening is formed on a substrate. The modified profile opening includes a first width proximate a surface of the substrate and a second width opposing the substrate. The second width is greater than the first width. A metal gate electrode is formed by filling the modified profile opening with a conductive material. A semiconductor device is also described, the device having a metal gate structure with a first width and a second, differing, width.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.