Low-impurity organosilicon product as precursor for CVD
US8329933B2 · kind B2 · utility
2Cited by
8References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 8, 2011 |
| Grant date | Dec 11, 2012 |
| Priority date | — |
| Expiry date | Aug 8, 2031 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC07F7/1804
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
The present invention provides an organosilicon composition comprising diethoxymethylsilane, a concentration of dissolved residual chloride, and a concentration of dissolved residual chloride scavenger that does not yield unwanted chloride salt precipitate when combined with another composition comprising diethoxymethylsilane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.