Patent · US Active

Snapshot pixel circuit for minimizing leakage current in an imaging sensor having a two-pole integration switch

US8330092B2 · kind B2 · utility

1Cited by

1References

2Claims

0Family size

Assignee

Trex Enterprises Corporation · US

Inventors

Peter Martin · Richmond, US
Paul Johnson · Blue Earth, US
Chris Sexton · San Diego, US

Key dates

Filing date	Feb 9, 2010
Grant date	Dec 11, 2012
Priority date	—
Expiry date	Apr 15, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH10F39/803
WIPO fieldAudio-visual technology
WIPO sectorElectrical engineering

Abstract

Pixel circuits, capable of operating in either “snapshot” or “rolling integration” mode, and compatible with a conformal photodiode coating. Preferred embodiments of the present invention are compatible with these coating materials, as well as others, including amorphous Silicon. The preferred pixel circuits includes additional transistors not provided in prior art pixel circuits to divert leakage current away from integration nodes when not integrating, to reset the integration node, and to buffer and select the integrated voltage.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.