Monolithically integrated antenna and receiver circuit for the detection of terahertz waves

US8330111B2 · kind B2 · utility

Assignee

• Johann Wolfgang Goethe-Universität Frankfurt am Main · DE

Inventors

• Erik Öjefors · Wuppertal, DE
• Peter Haring Bolivar · Wenden, DE
• Hartmut G. Roskos · Kronberg, DE
• Ullrich R. Pfeiffer · Wolfsburg, DE

Key dates

• Filing date: Dec 12, 2008
• Grant date: Dec 11, 2012
• Expiry date: May 12, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/00
• WIPO field: Basic communication processes
• WIPO sector: Electrical engineering

Abstract

The present invention relates to a device for detecting millimeter waves, having at least one field effect transistor with a source, a drain, a gate, a gate-source contact, a source-drain channel, and a gate-drain contact. Compared to a similar such device, the problem addressed by the present invention, among others, is that of providing a device which enables the provision of a field effect transistor for detecting the power and/or phase of electromagnetic radiation in the Thz frequency range. In order to create such a device, it is suggested according to the invention, that a device be provided which has an antenna structure wherein the field effect transistor is connected to the antenna structure in such a manner that an electromagnetic signal received by the antenna structure in the THz range is fed into the field effect transistor via the gate-source contact, and wherein the field effect transistor and the antenna structure are arranged together on a single substrate.