Quantum dot light emitting device having quantum dot multilayer
US8330142B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 19, 2010 |
| Grant date | Dec 11, 2012 |
| Priority date | — |
| Expiry date | Dec 25, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K71/15
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A quantum dot light emitting device includes; a substrate, a first electrode disposed on the substrate, a second electrode disposed substantially opposite to the first electrode, a first charge transport layer disposed between the first electrode and the second electrode, a quantum dot light emitting layer disposed between the first charge transport layer and one of the first electrode and the second electrode, and at least one quantum dot including layer disposed between the quantum dot light emitting layer and the first charge transport layer, wherein the at least one quantum dot including layer has an energy band level different from an energy band level of the quantum dot light emitting layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.