Semiconductor light-emitting device

US8330181B2 · kind B2 · utility

Assignee

• Rohm Co., Ltd. · JP

Inventors

• Nobuaki Matsui · Kawasaki, JP
• Atsushi Yamaguchi · Kariya, JP

Key dates

• Filing date: May 14, 2008
• Grant date: Dec 11, 2012
• Expiry date: May 14, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/841

Abstract

A semiconductor light-emitting device capable of increasing an amount of light irradiated to the outside is provided.A semiconductor light-emitting device (1) includes a substrate (2), an n-type semiconductor layer (3), a light-emitting layer (4), a p-type semiconductor layer (5), an n-side pad electrode (6), an n-side pad electrode (7), a p-side electrode (8), a reflecting layer (9), and a p-side pad electrode (10). The n-side pad electrode (7) is electrically connected to the n-type semiconductor layer (3) via the n-side pad electrode (6). The p-side pad electrode (10) is electrically connected to the p-type semiconductor layer (5) via the p-side electrode (8). A connection surface (7a) of the n-side pad electrode (7) connected to the n-type semiconductor layer (3) is arranged in a first area (Ar1) closer to a short side (2b) on an arrow B direction-side, and a connection surface (10a) of the p-side pad electrode (10) connected to the p-type semiconductor layer (5) is arranged in a fourth area (Ar4) closest to a short side (2b) on an arrow A direction-side among the first area (Ar1) to the fourth area (Ar4) formed by equally dividing the substrate (2) into four.