Bidirectional voltage-regulator diode
US8330184B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 17, 2011 |
| Grant date | Dec 11, 2012 |
| Priority date | — |
| Expiry date | Jun 6, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D10/40
Abstract
In one embodiment, a bidirectional voltage-regulator diode includes first to fifth semiconductor layers formed on an inner surface of a first recess formed in a semiconductor substrate of an N-type in the order. The first semiconductor layer of the N-type has a first impurity concentration lower than an impurity concentration of the semiconductor substrate. The second semiconductor layer of a P-type has a second impurity concentration. The third semiconductor layer of the P-type has a third impurity concentration higher than the second impurity concentration. The fourth semiconductor layer of the P-type has a fourth impurity concentration lower than the third impurity concentration. The fifth semiconductor layer of the N-type has a fifth impurity concentration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.