Semiconductor device
US8330254B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 28, 2009 |
| Grant date | Dec 11, 2012 |
| Priority date | — |
| Expiry date | Sep 18, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/01029
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor wafer in which semiconductor chip forming regions and a scribe region located between the semiconductor chip forming regions are formed, a plurality of semiconductor chip circuit portions provided over the semiconductor wafer, a plurality of first conductive layers, provided in each of the semiconductor chip forming regions, which is electrically connected to each of the circuit portions, and a first connecting portion that electrically connects the first conductive layers to each other across a portion of the scribe region. An external power supply or grounding pad is connected to any one of the first conductive layer and the first connecting portion. The semiconductor device includes a communication portion, connected to the circuit portion, which performs communication with the outside by capacitive coupling or inductive coupling.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.