Patent · US Active

Bulk acoustic resonator comprising non-piezoelectric layer

US8330325B1 · kind B1 · utility

26Cited by

27References

19Claims

0Family size

Assignee

AVAGO TECHNOLOGIES WIRELESS IP (SINGAPORE) PTE. LTD. · SG

Inventors

Dariusz Burak · Fort Collins, US
Jyrki Kaitila · Riemerling, DE
Alexandre Augusto Shirakawa · San Jose, US
Martin Handtmann · Riemerling, DE
Phil Nikkel · Loveland, US

Key dates

Filing date	Jun 16, 2011
Grant date	Dec 11, 2012
Priority date	—
Expiry date	Jun 16, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH03H9/585
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

In a representative embodiment, a bulk acoustic wave (BAW) resonator structure comprises: a first electrode disposed over a substrate; a first piezoelectric layer disposed over the first electrode; a second electrode disposed over the first piezoelectric layer, wherein c-axis orientations of crystals of the first piezoelectric layer are substantially aligned with one another; a second piezoelectric layer disposed over the second electrode; a non-piezoelectric layer; and a third electrode disposed over the second piezoelectric layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.