Image sensor with multilayer interference filters
US8330840B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 6, 2009 |
| Grant date | Dec 11, 2012 |
| Priority date | — |
| Expiry date | Aug 20, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
Image sensors are provided for electronic imaging devices. An image sensor can be formed from an array of image pixels. Bragg-type multilayer interference filters can be formed for the image sensor using dielectric layers with alternating high and low indices of refraction. The multilayer interference filters can be configured to form band-pass filters of desired colors and infrared-blocking filters. Dielectric layers with non-flat bulk absorption properties may be used to tune the absorption of the filters. The interference filters may be provided in a uniform pattern so that an image sensor exhibits a monochrome response or may be arranged in a multicolor color filter array pattern such as a Bayer pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.