Patent · US Active

Semiconductor integrated circuit

US8331130B2 · kind B2 · utility

14Cited by

2References

18Claims

0Family size

Assignee

Kabushiki Kaisha Toshiba · JP

Inventors

Shinichi Yasuda · Tokyo, JP
Keiko Abe · Kawasaki, JP
Shinobu Fujita · Tokyo, JP

Key dates

Filing date	Sep 13, 2010
Grant date	Dec 11, 2012
Priority date	—
Expiry date	Sep 23, 2030

Classification

Technology area (CPC G)Physics
CPC primaryG11C2213/75
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

In one embodiment, a semiconductor integrated circuit includes a first resistive-change element, a second resistive-change element and a first switching element. The first resistive-change element includes one end having a first polarity connected to a first power source. The first resistive-change element includes another end having a second polarity connected to an output node. The second resistive-change element includes one end having the second polarity connected to the output node. The first switching element includes a first terminal connected to another end of the second resistive-change element. The first switching element includes a second terminal connected to a second power source.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.