Nonvolatile memory device
US8331152B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 22, 2010 |
| Grant date | Dec 11, 2012 |
| Priority date | — |
| Expiry date | May 29, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/77
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile memory device includes resistive memory devices in a three-dimensional structure. A block select circuit generates a block select signal for selecting a memory block. In response to the block select signal, local word line selection units connected to each memory block connect global word lines connected to a word line decoder and local word lines, and local bit line selection units connected to each memory block connect global bit lines connected to a sense amplifier and local bit lines. Each memory block includes local word lines which extend in a first direction and are stacked in a second direction perpendicular to the first direction on a second plane perpendicular to a first plane. Local bit lines extend in the second direction to cross local word lines. Memory cells are formed at cross-points where local word lines and local bit lines cross one another.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.