Patent · US Active

MEMS pressure sensor using capacitive technique

US8334159B1 · kind B1 · utility

5Cited by
8References
13Claims
0Family size

Assignee

Inventor

Key dates

Filing dateMar 30, 2009
Grant dateDec 18, 2012
Priority date—
Expiry dateMar 6, 2030

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01L9/0073
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A micro-electro-mechanical system (MEMS) pressure sensor includes a silicon spacer defining an opening, a silicon membrane layer mounted above the spacer, a silicon sensor layer mounted above the silicon membrane layer, and a capacitance sensing circuit. The silicon membrane layer forms a diaphragm opposite of the spacer opening, and a stationary perimeter around the diaphragm and opposite the spacer. The silicon sensor layer includes an electrode located above the diaphragm of the silicon membrane layer. The capacitance sensing circuit is coupled to the electrode and the silicon membrane layer. The electrode and the silicon membrane layer move in response to a pressure applied to the diaphragm. The movement of the silicon membrane layer causes it to deform, thereby changing the capacitance between the electrode and the silicon membrane layer by an amount proportional to the change in the pressure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.