Manufacturing method of semiconductor device
US8334172B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 9, 2011 |
| Grant date | Dec 18, 2012 |
| Priority date | — |
| Expiry date | Mar 14, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Technology capable of preventing the deterioration of the reliability of semiconductor devices caused by the gasification of a part of the material constituting a wiring substrate is provided. A wiring layer constituting a circuit pattern is formed over each of the front and rear surfaces of a glass epoxy substrate, and after the formation of a solder resist covering the wiring layer while exposing a part of the wiring layer and prior to a heat treatment (first heat treatment) at 100° C. to 150° C. for dehumidification, a heat treatment (second heat treatment) at 160° C. to 230° C. for gasifying and discharging an organic solvent contained in the material constituting a wiring substrate is performed for the wiring substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.