Methods and apparatus for manufacturing semiconductor wafers
US8334194B2 · kind B2 · utility
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10References
14Claims
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Assignee
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Key dates
| Filing date | Feb 6, 2008 |
| Grant date | Dec 18, 2012 |
| Priority date | — |
| Expiry date | Feb 10, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02667
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods and apparatus for fabricating a semiconductor sheet are provided. In one aspect, a method for fabricating a semiconductor wafer includes applying a layer of semiconductor material across a portion of a setter material, introducing the setter material and the semiconductor material to a predetermined thermal gradient to form a melt, wherein the thermal gradient includes a predetermined nucleation and growth region, and forming at least one local cold spot in the nucleation and growth region to facilitate inducing crystal nucleation at the at least one desired location.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.