Method for producing silicon nanostructures
US8334216B2 · kind B2 · utility
15Cited by
3References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 28, 2010 |
| Grant date | Dec 18, 2012 |
| Priority date | — |
| Expiry date | Feb 23, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/10
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present invention provides silicon nanostructures and their producing method. By employing a metal-assisted chemical etching method, the bottom of the produced silicon nanostructures, connected to the silicon substrate, is porous and side etched, such that the silicon nanostructures can be easily transferred to a hetero-substrate by a physical manner.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.