IGZO-based oxide material and method of producing IGZO-based oxide material
US8334532B2 · kind B2 · utility
25Cited by
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9Claims
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Key dates
| Filing date | Jun 15, 2010 |
| Grant date | Dec 18, 2012 |
| Priority date | — |
| Expiry date | Apr 27, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02664
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention provides an IGZO-based oxide material and a method of producing the same, the IGZO-based oxide material being represented by a composition formula of In2-xGaxZnO4-δ, where 0.75<x<1.10 and 0<δ≦1.29161×exp(−x/0.11802)+0.00153, and being formed from a single phase of IGZO having a crystal structure of YbFe2O4.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.