Unipolar diode with low turn-on voltage

US8334550B1 · kind B1 · utility

Assignee

• NORTHROP GRUMMAN SYSTEMS CORPORATION · US

Inventors

• Donald J. Sawdai · Redondo Beach, US
• Kwok K. Loi · Cerritos, US
• Vesna Radisic · Hermosa Beach, US

Key dates

• Filing date: Jun 9, 2011
• Grant date: Dec 18, 2012
• Expiry date: Jun 9, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/824

Abstract

A unipolar diode with low turn-on voltage includes a subcathode semiconductor layer, a low-doped, wide bandgap cathode semiconductor layer, and a high-doped, narrow bandgap anode semiconductor layer. A junction between the cathode layer and the anode layer creates an electron barrier in the conduction band, with the barrier configured to produce a low turn-on voltage for the diode. A unipolar diode with low turn-on voltage includes an n+ subcathode semiconductor layer, a low-doped, wide bandgap cathode semiconductor layer, and an n+ narrow bandgap anode semiconductor layer. Again, a junction between the cathode layer and the anode layer creates an electron barrier in the conduction band, with the barrier configured to produce a low turn-on voltage for the diode.