Junction varactor for ESD protection of RF circuits
US8334571B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 25, 2010 |
| Grant date | Dec 18, 2012 |
| Priority date | — |
| Expiry date | Feb 4, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
Abstract
An ESD protection device includes a first well of a first semiconductor type disposed in a substrate of a second semiconductor type forming a first diode. A second well of the second semiconductor type is formed in the substrate to form a second diode with the first well. A first plurality of doped regions of the first semiconductor type are formed in an upper surface of the first well. A second plurality of doped regions of the second semiconductor type are formed in the upper surface of the first well forming a third diode with the first well. A plurality of STI regions are formed in the upper surface of the first well. Each STI region is disposed between a doped region of the first and second semiconductor types. The third diode provides a current bypass when an ESD voltage spike is received at one of the first or second plurality of doped regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.