Semiconductor device
US8334577B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 11, 2009 |
| Grant date | Dec 18, 2012 |
| Priority date | — |
| Expiry date | May 14, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/815
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor device includes a semiconductor substrate formed of at least two kinds of group III elements and nitrogen, an active layer formed on the semiconductor substrate, and a nitride semiconductor layer formed on a surface of the semiconductor substrate and formed between the semiconductor substrate and the active layer. The nitride semiconductor layer is formed of the same constituent elements of the semiconductor substrate. A composition ratio of the lightest element among the group III elements of the nitride semiconductor layer is higher than a composition ratio of the corresponding element of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.