Semiconductor chip comprising a directional coupler having a specific main line and sub-line arrangement
US8334580B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 26, 2007 |
| Grant date | Dec 18, 2012 |
| Priority date | — |
| Expiry date | Jun 22, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A technique capable of promoting miniaturization of an RF power module used in a mobile phone etc. is provided. A directional coupler is formed inside a semiconductor chip in which an amplification part of the RF power module is formed. A sub-line of the directional coupler is formed in the same layer as a drain wire coupled to the drain region of an LDMOSFET, which will serve as the amplification part of the semiconductor chip. Due to this, the predetermined drain wire is used as a main line and the directional coupler is configured by a sub-line arranged in parallel to the main line via an insulating film, together with the main line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.