Method of fabricating a tunneling magnetoresistive (TMR) reader
US8336194B2 · kind B2 · utility
150Cited by
14References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 3, 2009 |
| Grant date | Dec 25, 2012 |
| Priority date | — |
| Expiry date | Oct 23, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49052
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a tunneling magnetoresistance (TMR) reader is disclosed. A TMR structure comprising at least one ferromagnetic layer and at least one nonmagnetic insulating layer is provided. A first thermal annealing process on the TMR structure is performed. A reader pattern definition process performed on the TMR structure to obtain a patterned TMR reader. A second thermal annealing process is performed on the patterned TMR reader.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.