Resistance-type random access memory device having three-dimensional bit line and word line patterning
US8338224B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 18, 2009 |
| Grant date | Dec 25, 2012 |
| Priority date | — |
| Expiry date | Aug 31, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
Abstract
Provided is a resistance random access memory device and a method of fabricating, the same. The method includes forming a bit-line stack in which a plurality of local bit-lines are vertically stacked on a substrate, forming a word-line including a plurality of local word-lines that extend in a vertical direction toward a side of the bit-line stack and a connection line that extends in a horizontal direction to connect the plurality of local word-lines with one another, and forming a resistance memory thin film between the bit-line stack and the word-line. The present inventive concept can realize a highly dense memory array with 3D cross-point architecture by simplified processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.