Transfer method for thin film nanomembrane structures
US8338268B2 · kind B2 · utility
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Key dates
| Filing date | Mar 17, 2011 |
| Grant date | Dec 25, 2012 |
| Priority date | — |
| Expiry date | Mar 17, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2007
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A transfer process for silicon nanomembranes (SiNM) may involve treating a recipient substrate with a polymer structural support. After treating the recipient substrate, a substrate containing the intended transferable devices may be brought in direct contact with the aforementioned polymer layer. The two substrates may then go through a Deep Reactive Ion Etch (DRIE) to remove at least a portion of the substrate containing the devices. Oxide may be selectively removed with a buffered oxide wet etch, leaving the transferred SiNM on the recipient substrate with the Underlying polymer layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.